Author/Authors :
Chong، نويسنده , , I. and Ishii، نويسنده , , F. and Todoroki، نويسنده , , S. and Suehara، نويسنده , , S. and Konishi، نويسنده , , T. K. Inoue، نويسنده , , S. and Tanaka، نويسنده , , S. and Hirao، نويسنده , , K.، نويسنده ,
Abstract :
The Effect of Si addition on In2O3 crystallization in a soda-boro-aluminosilicate glass was investigated. Si was found to be an essential component for obtaining glass material because the Si-free batch did not vitrify under the same condition. Transmission electron microscopy measurements on the glasses synthesized revealed that In2O3 particles with diameter 5 nm size precipitated by an annealing for 3 h at more than 550 °C and their size increased with an increase of heat-treatment temperature. From the X-ray photoelectron spectroscopy measurement, the binding energy of In2O3 for as prepared glass shifted to higher binding energy after annealing in air. The band gap of In2O3 particles decreased from 3.9 eV for as prepared glass samples to 2.6 eV for the glass sample annealed at 600 °C.
