Synthesis and characterization of single-source precursors to nanocrystalline GaP, GaPxAs1−x, and GaPxSb1−x. X-ray crystal structures of [Et2GaP(SiMe3)2]2, (Me3Si)2P[μ-GaEt2]2As(SiMe3)2, and (Me3Si)2P[μ-GaEt2]2Sb(SiMe3)2

The 1:1 mole ratio reaction of Et2GaCl with P(SiMe3)3 resulted in the formation of [Et2GaP(SiMe3)2]2 (1). The mixed-pnicogen compounds (Me3Si)2P[μ-GaEt2]2As(SiMe3)2 (2) and (Me3Si)2P[μ-GaEt2]2Sb(SiMe3)2 (3) were prepared from the 2:1:1 mole ratio reactions of Et2GaCl with P(SiMe3)3 and As(SiMe3)3 and P(SiMe3)3 and Sb(SiMe3)3, respectively. Compounds 2 and 3 were also synthesized by comproportionation reactions of 1 and [Et2GaAs(SiMe3)2]2, and 1 and [Et2GaSb(SiMe3)2]2, respectively. Characterization of 1, 2, and 3 was accomplished using multinuclear NMR, elemental analysis, mass spectrometry, and single-crystal X-ray crystallographic analysis. The X-ray crystal structures of compounds 1, 2 and 3 are reported. Thermolysis of 1, 2, and 3 results in the formation of nanocrystalline GaP, GaPxAs1−x, or GaPxSb1−x, respectively. Compound 3 represents the first example of a compound containing a P(μ-Ga)2Sb core.