IR laser decomposition of 1,3-disilacyclobutane in presence of carbon disulfide: chemical vapour deposition of polythiacarbosilane

TEA CO2 laser irradiation of gaseous mixtures of 1,3-disilacyclobutane – carbon disulfide affords chemical vapour deposition of solid polythiacarbosilane films that possess Si–S–X (X = Si, C), S–H and Si–H bonds and undergo slow hydrolysis in air to polyoxothiacarbosilanes containing Si–H, Si–O–Si and (C)S–H bonds. The formation of the polythiacarbosilane is proposed to take place via polymerization of transient silene and incorporation of CS2 into growing polysilene network.