Title of article :
Preferential coalescence of nanocrystalline silicon on different film substrates
Author/Authors :
Lin، نويسنده , , C.Y. and Fang، نويسنده , , Y.K. and Chen، نويسنده , , S.F. and Lin، نويسنده , , C.S. and Chou، نويسنده , , T.H. and Hwang، نويسنده , , S.B. and Hwang، نويسنده , , J.S. and Lin، نويسنده , , K.I.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2006
Abstract :
The characteristics of nanocrystalline silicon deposited on different film substrates were studied. Through atomic force microscopy, field emission scanning electron microscopy, Raman scattering and Hall effect measurements, we investigated and compared the morphology, columnar grain size, crystallinity and Hall mobility of nanocrystalline silicon on different film substrates. The mechanisms affecting the characteristics of nanocrystalline silicon deposited to different substrates were studied in detail.
Keywords :
Silicon , Raman scattering , X-ray diffraction , chemical vapor deposition , nanocrystals , Atomic force and scanning tunneling microscopy , SEM , Raman spectroscopy , Nanoparticles , Electrical and electronic properties
Journal title :
Journal of Non-Crystalline Solids
Journal title :
Journal of Non-Crystalline Solids
