Physico-chemical processes in metal–oxide–semiconductor transistors with thick gate oxide during high electric field stress

A complete study of the defects created in the gate oxide and at the gate oxide/substrate interface of metal–oxide–semiconductor transistors with thick gate oxide (tox > 10 nm) during high electric field stress, and the mechanisms responsible for these defects creation have been given. In addition, some results of positive/negative high electric field stress with constant gate voltage of commercial n-channel power metal–oxide–semiconductor transistors with thick gate oxide of 100 nm, have been explained using this study.