Title of article :
Electron emission from excited states of E′ centers in SiO2
Author/Authors :
Zatsepin، نويسنده , , A.F.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2007
Abstract :
The applicability of the non-stationary optically stimulated electron emission (OSEE) to the spectroscopy of E′ centers in different SiO2 modifications was demonstrated. Spectral dependences of the OSEE from E′ centers in samples of silica glass, crystalline α-quartz, SiO2 films and nanoceramics exposed to fast electrons and ions were obtained. A model of the energy structure of E′ centers accounting for the absence of luminescence and taking into account the presence of two non-radiative relaxation channels (intracenter and ionization) is discussed. This model was used to substantiate the mechanism of the photothermal decay of E′ centers and to determine the quantum yields of OSEE for different types of E′ centers.
Keywords :
Photoinduced effects , silica , Surfaces and interfaces , nanocrystals , quartz , ceramics , Thin film transistors , Films and coatings , Planar waveguides , optical spectroscopy , Optical properties , ABSORPTION , Radiation effects , radiation , Defects
Journal title :
Journal of Non-Crystalline Solids
Journal title :
Journal of Non-Crystalline Solids