Tunneling injection temperature dependence in EEPROM cell

In this paper we propose a new model of the EEPROM tunnel capacitance that takes into account temperature dependence. For this purpose, non-quasi-static C(V) measurements are made in order to extract the tunnel capacity physical parameters. Temperature dependence of the interface state density occupation was evaluated. Simulation of surface potential with temperature variation was implemented. We propose a complete electrical simulation of tunnel capacitance with temperature dependence. Finally, temperature EEPROM cell working simulations are presented.