Title of article
Thin film deposition of Ge33As12Se55 by pulsed laser deposition and thermal evaporation: Comparison of properties
Author/Authors
Jarvis، نويسنده , , R.A. and Wang، نويسنده , , R.P. and Rode، نويسنده , , A.V. and Zha، نويسنده , , C. and Luther-Davies، نويسنده , , B.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2007
Pages
3
From page
947
To page
949
Abstract
Thin films of Ge33As12Se55 were produced using two deposition techniques, ultra-fast pulsed laser deposition (UFPLD) and thermal evaporation (TE), and their properties have been investigated. The chemical composition of the UFPLD films was virtually identical to the composition of the chalcogenide glass targets, whereas the composition of films deposited by TE was significantly different from the target material. Heating of the substrate with a temperature gradient during deposition produced a gradient in composition in both UFPLD and TE films.
Keywords
dielectric properties , composition , Laser deposition , chalcogenides , Raman spectroscopy , Thermal evaporation , Thin films , Ge33As12Se55
Journal title
Journal of Non-Crystalline Solids
Serial Year
2007
Journal title
Journal of Non-Crystalline Solids
Record number
1380896
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