Title of article
Nano-phase separation of arsenic tri-sulphide (As2S3) film and its effect on plasma etching
Author/Authors
Choi، نويسنده , , D.-Y. and Madden، نويسنده , , S. and Wang، نويسنده , , R.P. and Rode، نويسنده , , A. and Krolikowska، نويسنده , , M. and Luther-Davies، نويسنده , , B.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2007
Pages
3
From page
953
To page
955
Abstract
We present evidence of nano-scale phase separation in amorphous arsenic tri-sulphide films prepared by ultra-fast pulsed laser deposition based on Raman spectroscopy, X-ray photo-electron spectroscopy, and atomic force microscopy. We also show the results from plasma etching this material and conclude that the grainy structure of etched surfaces comes from the differential chemical etch rates of the different phases.
Keywords
UPS/XPS , Laser deposition , Planar waveguides , chalcogenides , Raman spectroscopy
Journal title
Journal of Non-Crystalline Solids
Serial Year
2007
Journal title
Journal of Non-Crystalline Solids
Record number
1380903
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