Author/Authors :
Ivanova، نويسنده , , Z.G. and Aneva، نويسنده , , Z. and Ganesan، نويسنده , , R. and Tonchev، نويسنده , , D. and Gopal، نويسنده , , E.S.R. and Rao، نويسنده , , K.S.R.K. and Allen، نويسنده , , T.W. and DeCorby، نويسنده , , R.G. and Kasap، نويسنده , , S.O.، نويسنده ,
Abstract :
The photoluminescence (PL) of a series of (GeS2)80(Ga2S3)20 glasses doped with different amounts of Er (0.17, 0.35, 0.52, 1.05 and 1.39 at.%) at 77 and 4.2 K has been studied. The influence of the temperature on the emission cross-section of the PL bands at ∼1540, 980 and 820 nm under host excitation has been defined. A quenching effect of the host photoluminescence has been established from the compositional dependence of the PL intensity. It has been found that the present Er3+-doped Ge–S–Ga glasses posses PL lifetime values about 3.25 ms.
Keywords :
chalcogenides , Amorphous semiconductors , Luminescence , Rare-earths in glasses
