Investigation of capacitance–voltage characteristics in Ge /high-κ MOS devices

We developed a one-dimensional numerical simulation code for the calculation of the gate voltage–capacitance characteristic of MOS structures including the self-consistently solving of the Schrödinger and Poisson equations for different alternative channel materials with high mobility such as Ge, and non-conventional gate dielectrics such as HfO2 and Al2O3. Our simulation results are confronted to experimental data for various MOS structures with different semiconductors and dielectric stacks.