Title of article :
Influence of the nitrogen flow rate on the order and structure of PECVD boron nitride thin films
Author/Authors :
Anutgan، نويسنده , , M. and Anutgan، نويسنده , , T. Aliyeva and Ozkol، نويسنده , , E. and Atilgan، نويسنده , , I. and Katircioglu، نويسنده , , B.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2009
Pages :
8
From page :
1622
To page :
1629
Abstract :
Three sets of boron nitride (BN) thin films are deposited with different N2/B2H6 flow ratios (r = 4, 10 and 25) by plasma enhanced chemical vapor deposition (PECVD). The variations of physical properties in different deposition sets are analyzed by optical (XPS, FTIR, UV–visible spectroscopies), mechanical and electrical measurements. The films are considered to be deposited in a turbostratic phase (t-BN). Evolution of bonding configurations with increasing r is discussed. Relatively higher nitrogen flow rate in the source gas mixture results in lower deposition rates, whereas more ordered films, which tend to reach a unique virtual crystal of band gap 5.93 eV, are formed. Anisotropy in the film structure and film inhomogeneity along the PECVD electrode radial direction are investigated.
Keywords :
optical spectroscopy , infrared properties , XPS , FTIR measurements , Medium-range order , Amorphous semiconductors , III–V semiconductors , composition , Optical properties , ABSORPTION
Journal title :
Journal of Non-Crystalline Solids
Serial Year :
2009
Journal title :
Journal of Non-Crystalline Solids
Record number :
1381797
Link To Document :
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