Author/Authors :
Cabello، نويسنده , , G. and Lillo، نويسنده , , L. and Buono-Core، نويسنده , , G.E.، نويسنده ,
Abstract :
In this paper amorphous ZrO2 and HfO2 thin films were obtained by direct UV irradiation of Zr(IV) and Hf(IV) β-diketonate precursor complexes on Si(1 0 0) and fused silica substrates. The precursors, Zr(CH3COCHCOCH3)4 and Hf(C6H5COCHCOCH3)4 were deposited as amorphous thin films by spin coating. The photochemistry of these films was monitored by FT-IR spectroscopy. The photolysis with 254 nm light led to the loss of the ligands from the coordination complexes, and the production of metallic oxides. The thin films products were characterized by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). These analyses revealed that as-deposited films are amorphous and that the presence of carbon is thought to arise from the ligands. However, post-annealing of the photodeposited films favors the stoichiometric and optical properties of ZrO2 and HfO2 thin films.
Keywords :
II–VI semiconductors , Photoinduced effects , Devices , Tin oxide , Sensors , Amorphous semiconductors , Diffraction and scattering measurements , III–V semiconductors , UPS/XPS , Films and coatings , Spin coating , chemical vapor deposition , Chemical properties , Special glasses and materials , Atomic force and scanning tunneling microscopy , X-ray fluorescence , Optical microscopy , Optical properties , Luminescence , optical spectroscopy , Electrochemical properties , Indium tin oxide and other transparent conductors