Electrodeposited and selenized CIGS thin films for solar cells

Cu(In,Ga)Se2 polycrystalline thin films were deposited adopting the potentiostatic electrochemical method on Mo/soda lime glass substrate. All the as-deposited Cu(In,Ga)Se2 thin films were annealed in a selenium atmosphere at 550 °C for 1 h to improve the film crystalline properties. The selenized CIGS thin films were characterized by energy dispersive spectroscopy (EDS), X-ray diffraction (XRD) and scanning electron microscopy (SEM).The results indicate Cu(In,Ga)Se2 thin films have single chalcopyrite structure and the grain size varies from 0.8 to 2.5 μm.