Title of article
ESR study of the hydrogenated nanocrystalline silicon thin films
Author/Authors
Su، نويسنده , , Tining and Ju، نويسنده , , Tong and Yan، نويسنده , , Baojie and Yang، نويسنده , , Jeffrey and Guha، نويسنده , , Subhendu and Taylor، نويسنده , , P. Craig، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2008
Pages
4
From page
2231
To page
2234
Abstract
We studied the stability and light-induced paramagnetic centers in hydrogenated nanocrystalline silicon thin films (nc-Si:H) by electron-spin-resonance (ESR) and photothermal-deflection-spectroscopy (PDS). There is no measurable change in defect density upon illumination with white light with a light intensity of 300 mW cm−2 for 300 h. At low temperatures, upon illumination with sub-bandgap light, a light-induced ESR signal appears. This signal is similar to that in hydrogenated micro-crystalline silicon (μc-Si:H).
Keywords
nanocrystals , Microcrystallinity , Electron-spin-resonance , ABSORPTION , 73.22.?f , 73.63.Bd , 76.30.?v , 78.55.Qr , Silicon , Defects
Journal title
Journal of Non-Crystalline Solids
Serial Year
2008
Journal title
Journal of Non-Crystalline Solids
Record number
1382766
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