Author/Authors :
Pier، نويسنده , , Tanguy and Kandoussi، نويسنده , , Khalid and Simon، نويسنده , , Claude and Coulon، نويسنده , , Nathalie and Mohammed-Brahim، نويسنده , , Tayeb and Lhermite، نويسنده , , Hervé، نويسنده ,
Abstract :
Microcrystalline silicon (μc-Si) films have been deposited on PDMS as well as on PEN substrate. Excimer laser annealing was used to improve the crystalline structure and so to obtain high mobility TFTs. The effect of the laser annealing on the crystalline structure of silicon films is studied using different characterization techniques and discussed. Mobility values of 60 cm2/V s with PDMS and 46 cm2/V s with PEN are obtained.
