Structural and electrical properties of hydrogen-doped films fabricated by solid-phase crystallization

We have investigated structural and electrical properties of hydrogen (H)-doped In 2 O 3 films fabricated by crystallization of the amorphous phase. To fabricate H-doped amorphous films, H 2 O vapor has been introduced into a sputtering system during the deposition of In 2 O 3 without substrate heating. The films fabricated by solid-phase crystallization at 200 °C have larger grains and lower strain than films fabricated by vapor-phase crystal growth. The resulting H-doped In 2 O 3 films show very large mobility of 130 cm2/V s with resistivity of 2.7 × 10 - 4 Ω cm . The high mobility in the films is ascribable to suppression of grain boundary defects as well as multicharged and neutral impurities.