Temporal electric conductivity variations of hydrogenated amorphous silicon due to high energy protons

Electric conductivity variations of undoped, n-type and p-type hydrogenated amorphous silicon (a-Si:H) thin films irradiated with various energy protons are systematically investigated. Dark conductivity (DC) and photoconductivity (PC) of the undoped samples increase at first due to proton irradiation and then decrease dramatically with increasing proton fluence. The increase in DC and PC becomes greater with increased proton energy. However, this increase is metastable and gradually decreases with time at room temperature. Similar results are observed in the n-type a-Si:H, whereas only a monotonic decrease is observed in DC and PC for the p-type samples. The increase of both DC and PC due to proton irradiation is attributed to metastable donor center generation. On further irradiation both the DC and PC decrease by the accumulation of radiation-induced defects, which act as deep traps and compensate carriers. The decrease in DC and PC becomes less pronounced as the proton energy increase and can be fitted along a universal line when the proton fluence is converted into displacement per atom (dpa).