Title of article :
High-pressure water vapor treatment for poly-crystalline germanium thin films
Author/Authors :
Sagisaka، نويسنده , , Takeru and Takatsu، نويسنده , , Takahiro and Isomura، نويسنده , , Masao، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2012
Pages :
3
From page :
2107
To page :
2109
Abstract :
We have investigated the high-pressure water (H2O) vapor treatment for poly-crystalline Ge (poly-Ge) thin films, which were prepared by solid phase crystallization. The optical-absorption coefficients of poly-Ge were reduced by the treatment, suggesting that the grain-boundary defects were successfully passivated. But the poly-Ge films were sometimes damaged by the treatment in higher pressure and temperature. Compromised conditions should be pursued between the effective passivation and avoiding the damage. The rapid cooling after the treatment promotes defect passivation but causes structural distortion. The results show that the high-pressure H2O vapor treatment is an effective method for the defect passivation of poly-Ge films.
Keywords :
Germanium , Polycrystalline , DEFECT , Vapor
Journal title :
Journal of Non-Crystalline Solids
Serial Year :
2012
Journal title :
Journal of Non-Crystalline Solids
Record number :
1383664
Link To Document :
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