Author/Authors :
Araya، نويسنده , , M. and Dيaz-Droguett، نويسنده , , D.E. and Ribeiro، نويسنده , , M. and F. Albertin، نويسنده , , K. and Avila، نويسنده , , J. and Fuenzalida، نويسنده , , V.M. and Espinoza، نويسنده , , R. and Criado، نويسنده , , D.، نويسنده ,
Abstract :
In this work we report studies of the photoluminescence emission in samples based on Si/SiOx films deposited by the Pulsed Electron Beam Ablation (PEBA) technique. The samples were prepared at room temperature using targets with different Si/SiO2 concentrations. The samples were characterized using X-ray Absorption Edge Spectroscopy (XANES) at the Si―K edge, Raman spectroscopy, Photoluminescence (PL) and X-ray Photoelectron Spectroscopy (XPS). The concentration of a-Si and nc-Si in the film was dependent on the silicon concentration in the target. It was also observed that the PL is strongly dependent on the structural amorphous/crystalline arrangement.
