Author/Authors :
Zhang، نويسنده , , Zhonghua and Song، نويسنده , , Sannian and Song، نويسنده , , Zhitang and Cheng، نويسنده , , Yan and Gu، نويسنده , , Yifeng and Wu، نويسنده , , Liangcai and Liu، نويسنده , , Bo and Feng، نويسنده , , Songlin، نويسنده ,
Abstract :
In this paper, Ga0.6Ge2.8Sb2.6Te4 film was investigated for long data retention phase change memory application. Compared with Ge2Sb2Te5, Ga0.6Ge2.8Sb2.6Te4 film has higher crystallization temperatures (~ 240 °C) and larger crystallization activation energy (~ 2.9 eV), which lead to a higher temperature (~ 135 °C) for ten year data retention. The reversible phase change can be realized by a 100-ns width electric pulse. Ga0.6Ge2.8Sb2.6Te4 based cell shows good endurance up to 1.05 × 105 SET–RESET cycles during endurance test.
