Selective epitaxy with in situ mask processing and pulse plasma

This article reviews the authorʹs PRESTO research on the selective epitaxy control of III-V semiconductors in pursuit of atomic-scale microfabrication technologies. The selective epitaxy of GaAs or AlAs has been investigated with the view points of in situ mask processing and modification of selectivity by pulsed plasma. The investigation has revealed that the indium oxide (In2O3) has a high potential as a mask material for the in situ selective epitaxy, since In2O3 can be formed in vacuum selectively and removed by hydrogen plasma. The advanced epitaxy technique, short-pulsed chemical beam epitaxy (SP-CBE) has been proposed and examined, where the cancellation of selectivity with pulsed plasma was found for AlAs epitaxy with SP-CBE on SiO2 using dimethylaluminumhydride (DMAIH).