Title of article :
A general model to describe the electrostatic potential at electrolyte oxide interfaces
Author/Authors :
van Hal، نويسنده , , R.E.G. and Eijkel، نويسنده , , J.C.T. and Bergveld، نويسنده , , P.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1996
Pages :
32
From page :
31
To page :
62
Abstract :
Colloid chemists have proposed several theories to describe the charging mechanism of metal oxides in electrolyte solutions and the resulting electrical double layer at the oxide surface. In this paper a new general theory to describe the electrostatic potential at the metal oxide electrolyte solution interface is presented. This theory describes the variations of the electrostatic potential as a function of the differential double layer capacitance and the intrinsic buffer capacity. ISFET measurements are interpreted using this theory, and it is shown that these measurements can differentiate between the theories for the double layer and the theories for the charging mechanism for the oxide.
Journal title :
Advances in Colloid and Interface Science
Serial Year :
1996
Journal title :
Advances in Colloid and Interface Science
Record number :
1386070
Link To Document :
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