• Title of article

    Creep behavior of a poled PZT wafer under longitudinal tensile stress and through thickness electric field

  • Author/Authors

    Kim، نويسنده , , Sang-Joo and Lee، نويسنده , , Chang-Hoan Lee، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2009
  • Pages
    10
  • From page
    716
  • To page
    725
  • Abstract
    A commercially available soft PZT wafer that is poled in thickness direction is subjected to three different sets of loading environment, and variations of electric displacement in thickness direction and longitudinal/transverse strains are measured over time. Pure tensile stress creep experiments are made in short and open-circuit conditions. Different material responses in the two electrical boundary conditions are explained by the effects of piezoelectrically produced internal electric field on linear material moduli and domain switching mechanisms. The material responses under pure antiparallel electric field load and combined load are compared with each other and the differences are explained by the opposite effects of longitudinal tensile stress on 90° domain switching.
  • Keywords
    PZT wafer , Creep , Domain switching , Tensile stress , Electric field
  • Journal title
    International Journal of Solids and Structures
  • Serial Year
    2009
  • Journal title
    International Journal of Solids and Structures
  • Record number

    1387221