Title of article :
Enhancement of trimethylamine sensitivity of MOCVD-SnO2 thin film gas sensor by thorium
Author/Authors :
Zhao، نويسنده , , Shiyong and Wei، نويسنده , , Peihai and Chen، نويسنده , , Shenhao Chen، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
Pages :
4
From page :
117
To page :
120
Abstract :
A thin film SnO2-based trimethylamine (TMA) gas sensor has been developed by using metallorganic chemical vapor deposition (MOCVD) technique. The effects of temperature and thorium dopant on the sensitivity of the sensor have been studied. The peak sensitivity of the sensor to TMA was found at 290°C. Thorium was an excellent sensitizer, which could increase the sensitivity to 300 ppm TMA from 5.9 to 142. The MOCVD-SnO2 element was capable of detecting TMA gas in a level of 10 ppm with short response time (16 s) with little interference of NH3.
Keywords :
MOCVD , TH , TMA gas sensor , SnO2 thin film
Journal title :
Sensors and Actuators B: Chemical
Serial Year :
2000
Journal title :
Sensors and Actuators B: Chemical
Record number :
1404030
Link To Document :
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