Silicon carbide powder synthesis by chemical vapour deposition from silane/acetylene reaction system

Amorphous fine silicon carbide powders have been prepared via the chemical vapour deposition from reaction mixture SiH4–C2H2 in a vertical tubular flow reactor in the temperature range 900–1250°C. Powder particles prepared at temperature 1100°C and C2H2/SiH4 mol ratio 1.2 are equiaxial, quasispherical and agglomerated. The mean particle size of the powder is approx. 0.1–0.2 μm. The maximum agglomerate size is about 0.3 μm.