Title of article :
Temperature dependence of ferroelectric properties of SBT thin films
Author/Authors :
Jimenez، نويسنده , , R. and Alemany، نويسنده , , C. and Calzada، نويسنده , , M.L. and Tejedor، نويسنده , , P. and Mendiola، نويسنده , , J.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2001
Pages :
4
From page :
1601
To page :
1604
Abstract :
Strontium bismuth tantalate (SBT) thin films have been deposited on Pt/TiO2(100)Si substrates by a metal–organic decomposition (MOD) method, using a non-stoichiometric composition. The measured net spontaneous polarization is a consequence of the parallel alignment of 180° domains, as it is confirmed by the random distribution of the pole figures. Measurements of temperature dependence of permitivitty, ε′, and remnant polarization, Pr, show diverse anomalies. The large shift of the temperature TC, is explained by the structure distortion associated with Bi:Sr ratio of the film. A strong decrease of Pr with T is observed that could be related with possible phase transitions, although more information on atomic level is needed to know the mechanisms involved.
Keywords :
films , Functional applications , Temperature , Ferroelectric properties , Tantalates
Journal title :
Journal of the European Ceramic Society
Serial Year :
2001
Journal title :
Journal of the European Ceramic Society
Record number :
1405311
Link To Document :
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