Title of article
Thin film piezoelectric property considerations for surface acoustic wave and thin film bulk acoustic resonators
Author/Authors
Kirby، نويسنده , , P.B and Potter، نويسنده , , M.D.G and Williams، نويسنده , , C.P and Lim، نويسنده , , M.Y، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
4
From page
2689
To page
2692
Abstract
We report on the optimisation of thin film piezoelectric ZnO for production of resonant acoustic MEMS devices (SAW and FBAR/BAW). The ZnO was deposited by RF sputtering, and conditions were optimised to promote uniform polycrystalline orientation, high resistivity and smooth surface morphology. Both surface acoustic wave and thin film bulk acoustic resonators exhibited high Q values with low insertion loss (3–5 dB).
Journal title
Journal of the European Ceramic Society
Serial Year
2003
Journal title
Journal of the European Ceramic Society
Record number
1406791
Link To Document