Title of article
(Ba,Sr)TiO3 thin film growth in a batch processing MOCVD reactor
Author/Authors
Regnery، نويسنده , , S. and Ehrhart، نويسنده , , P. and Fitsilis، نويسنده , , F. and Waser، نويسنده , , R. and Ding، نويسنده , , Y. and Jia، نويسنده , , C.L. and Schumacher، نويسنده , , M. and Schienle، نويسنده , , F. and Juergensen، نويسنده , , H.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
6
From page
271
To page
276
Abstract
Thin films of different compositions within the (Bax,Sr1−x)TiO3 solid solution series were deposited in a planetary multi-wafer MOCVD reactor using different solutions of Sr(thd)2, Ba(thd)2 and Ti(O-i-Pr)2(thd)2 precursors. Structural and electrical properties of Pt/BST/Pt MIM structures are presented. On the base of film thickness series ranging from 10 to 150 nm the electrical permittivity is discussed within the dead layer model. The performance of two different liquid precursor delivery systems, characterized by flash evaporation and liquid injection, respectively, are compared for the example of different SrTiO3 films. Finally, the growth of SrTiO3 on Pt(111) is compared with the growth on Si(100) and the electrical characteristics of the Pt/STO/Si MIS structures are discussed.
Keywords
BaTiO3 and titanates , capacitors , dielectric properties , Electron microscopy , Thin films
Journal title
Journal of the European Ceramic Society
Serial Year
2004
Journal title
Journal of the European Ceramic Society
Record number
1406884
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