Preparation of ferroelectric Pb(Zr1−xTix)O3/Si films by laser lift-off technique

Materials characteristics and ferroelectric properties of thick xPb(Ni1/3Nb2/3)O3-(1-x)Pb(Zr0.52Ti0.48)O3 (x=0.3), PNN-PZT films, which were prepared by doctor-blade tape-casting and laser lift-off processes, were investigated. The underlying buffer materials were observed to influence significantly the densification behavior for the PNN-PZT sapphire layers. For PNN-PZT/sapphire films sintered without buffer layer, the substrates impose pronounced constraint on materials shrinkage, inducing the formation of porosity for the PNN-PZT layers. The proportion of pores is pronouncedly reduced when using a Pb(Zr0.52Ti0.48)O3 thin layer (<0.3 μm) prepared by metal-organic decomposition process as buffer layer. The PNN-PZT films transferred to silicon substrates by laser lift-off processes exhibit large electrical polarization characteristics (Pr=41.9 μC/cm2), with small coercive field (Ec=35.6 kV/cm).