Preparation and evaluation of LaNiO3 thin film electrode with chemical solution deposition

LaNiO3 (LNO) thin films were prepared onto Si substrate by chemical solution deposition. The orientation of the LNO films was controlled by changing concentration of precursor solution. The resistivity of the resultant LNO films was 1.82 – 2.57×10−3Ωcm. The obtained 0.3 M-LNO film was flat surface, highly (100) orientation, and had a low resistivity of 1.85×10−3Ωcm. PbZr0.53Ti0.47O3 was fabricated onto the resultant 0.3 M-LNO electrode, and the sample showed a good ferroelectric property.