Ferroelectric properties of Pb(Zr,Ti)O3 thin films prepared by low-temperature MOCVD using PbTiO3 seeds

Low-temperature metalorganic chemical vapor deposition (MOCVD) of Pb(Zr,Ti)O3 (PZT) thin films, as low as 370 °C, was successfully achieved. Influence of the crystalline nature of PbTiO3 seeds on crystalline and ferroelectric properties of PZT thin films were investigated. The orientation of PZT thin films and its degree were strongly influenced by those of PbTiO3 seeds. PbTiO3 seeds were very useful to decrease growth temperature of PZT films. The PZT film was successfully obtained at 370 °C only when PbTiO3 seeds were used, exhibiting remanent polarization (2Pr) of 4.2 μC/cm2 and coercive field (2Ec) of 63 kV/cm.