Author/Authors :
Sternberg، نويسنده , , A. and Kundzins، نويسنده , , K. and Zauls، نويسنده , , V. and Aulika، نويسنده , , I. and ?akare، نويسنده , , L. and Bittner، نويسنده , , R. and Weber، نويسنده , , H. and Humer، نويسنده , , K. and Lesnyh، نويسنده , , D. and Kulikov، نويسنده , , D. and Trushin، نويسنده , , Y.، نويسنده ,
Abstract :
Irradiation effects on highly oriented antiferroelectric PbZrO3 and ferroelectric Pb0.92La0.08(Zr0.65Ti0.35)O3 thin films are investigated being exposed to neutron irradiation up to fluence 2*1022 m−2. The higher resistance of antiferroelectric PbZrO3 thin films as compared to ferroelectric heterostructures to large fluences of neutron irradiation is recognized and discussed. Influence of two factors (structural and charge) was taken into account analysing irradiation effects on materials of different polarization states: ferroelectric PLZT (ceramics and thin films) and antiferroelectric PbZrO3 films.
Keywords :
Antiferroelectric and ferroelectric thin films , dielectric properties , Radiation-induced charges , Neutron irradiation , Oxygen vacancies
