Title of article :
Structure and dielectric properties of sol–gel 9/65/35 PLZT thin films
Author/Authors :
A. Khodorov، نويسنده , , A. and Pereira، نويسنده , , M. and Gomes، نويسنده , , M.J.M.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Abstract :
Ferroelectric lead lanthanum zirconate titanate thin films were prepared by a sol–gel method on Pt(1 1 1)/TiO2/SiO2/Si substrate. The texture selection was observed to be very sensitive to the preparation routine and samples with different preferred orientation were produced. The large- or fine-grained microstructure was observed depending on film thickness. The dielectric measurements of 360 nm thick film performed in the frequency window 10 Hz÷2 MHz revealed the typical relaxor behaviour. The strong dispersion of dielectric permittivity was observed and the temperature shift of maximum of imaginary part of dielectric permittivity with measured frequency was fitted well with the Vogel-Fulcher law.
Keywords :
Sol–gel processes , dielectric properties , films , PLZT , Relaxor behaviour
Journal title :
Journal of the European Ceramic Society
Journal title :
Journal of the European Ceramic Society