Author/Authors :
Baratto، نويسنده , , C and Comini، نويسنده , , E and Faglia، نويسنده , , G and Sberveglieri، نويسنده , , Girolamo Di Francia، نويسنده , , G and De Filippo، نويسنده , , Eliana La Ferrara، نويسنده , , V and Quercia، نويسنده , , L and Lancellotti، نويسنده , , L، نويسنده ,
Abstract :
Porous silicon (PS) layers with 60% porosity and 80 μm thick were prepared from n-type silicon wafer. We present the sensitivity of PS photoluminescence to 250 ppm of carbon monoxide. Besides the variation of conductivity of the device due to presence of organic vapors such as chloroform, methanol, ethanol and toluene have been carried out.
