Title of article :
A study on a platinum–silicon carbide Schottky diode as a hydrogen gas sensor
Author/Authors :
Kim، نويسنده , , C.K. and Lee، نويسنده , , J.H and Lee، نويسنده , , Y.H and Cho، نويسنده , , N.I and Kim، نويسنده , , D.J، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
Abstract :
The mechanism of hydrogen sensing by platinum–silicon carbide Schottky diode was investigated over the temperature range of 100–500°C. The effects of hydrogen adsorption on the parameters such as barrier height, initial rate of hydrogen adsorption, and hydrogen reaction kinetics were investigated.
Keywords :
SiC , Hydrogen , diode , Sensor
Journal title :
Sensors and Actuators B: Chemical
Journal title :
Sensors and Actuators B: Chemical
