The hysteresis and drift effect of hydrogenated amorphous silicon for ISFET

According to the experimental results, the output behavior of the device consists of four parts: fast response, slow response, drift and hysteresis. The hysteresis and drift limit the accuracy obtained from pH-sensitive surface in ion-sensitive field-effect transistors (pH-ISFETs). In this paper, we have studied that hysteresis affects of hydrogenated amorphous silicon (a-Si:H)-gate ISFETs by exposing the device to two cycles of pH values and compared the hysteresis amounts. In addition, we have measured the drift effect of a-Si:H at the different pH values and understand the influence of pH values for the drift effects of a-Si:H-gate ISFETs.