Sulfate ion-selective field effect transistors prepared by sol–gel technique

Sol–gel technique was used for the preparation of sulfate ion-selective membranes based on ion-selective field effect transistors at low temperature (80°C). The sensors prepared with the optimum conditions of sol–gel membrane had excellent properties on accuracy, stability and reproducibility for the measurement in sodium sulfate solutions. The response potential slope was 30±1 mV/decade. The limit of detection for the sensors was 3×10−6 M in sodium sulfate solutions.