Author/Authors :
Baratto، نويسنده , , C and Sberveglieri، نويسنده , , G and Comini، نويسنده , , E and Faglia، نويسنده , , G and Benussi، نويسنده , , Eliana La Ferrara، نويسنده , , V and Quercia، نويسنده , , Girolamo Di Francia، نويسنده , , G and Guidi، نويسنده , , V and Vincenzi، نويسنده , , D and Boscarino، نويسنده , , D and Rigato، نويسنده , , V، نويسنده ,
Abstract :
Porous silicon (PS), obtained by electrochemical anodization of an n-type silicon wafer, was catalysed by sputtering gold onto the surface (4, 8, 15 and 40-nm nominal thickness). Investigation by Rutherford backscattering spectroscopy (RBS) and by electron microscopy showed that gold did not form a continuous layer, but rather formed clusters penetrating into the pores of PS by about 1 μm. A variation of the sample conductivity in the presence of a few parts per million of NO2 and NO was recorded at room temperature. We demonstrated that, as a result of Au catalysation, PS is suitable for sensing nitrogen oxides with negligible influence by interfering gases such as CO, CH4 or methanol. Indeed, we found that humidity appreciably affected the response.
Keywords :
Porous silicon , Gas sensor , gold catalysis , Rutherford backscattering spectroscopy , nitrogen oxides
