Title of article
PECVD prepared SnO2 thin films for ethanol sensors
Author/Authors
Hellegouarc’h، نويسنده , , F. and Arefi-Khonsari، نويسنده , , F. and Planade، نويسنده , , R. and Amouroux، نويسنده , , J.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
8
From page
27
To page
34
Abstract
SnO2 thin films are elaborated by a PECVD process in a RF glow discharge reactor. Two kinds of as-deposited films have been studied; unbiased (diode reactor) and biased ones (triode reactor) according to their properties and their response to specific gases such as ethanol. Characterization of the films are carried out by different techniques: FTIR, AES, X-ray diffraction, AFM in order to explain the modifications generated by the bias voltage. The detection results show best sensitivities (S=Ra/Rs) for unbiased films to ethanol at 450°C (S=45 for 10 ppm).
Keywords
PECVD , Gas sensor , Tin oxide
Journal title
Sensors and Actuators B: Chemical
Serial Year
2001
Journal title
Sensors and Actuators B: Chemical
Record number
1412722
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