Title of article :
High sensitive tellurium based NO2 gas sensor
Author/Authors :
Tsiulyanu، نويسنده , , D. and Marian، نويسنده , , S. and Miron، نويسنده , , V. and Liess، نويسنده , , H.-D.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2001
Abstract :
For the first time it is shown, that tellurium based thin films exhibit high sensitivity to nitrogen dioxide at room temperature. The resistance of the tellurium films decreases reversibly in the presence of NO2. The sensitivity of this device depends on the gas concentration and it increases to lower concentrations less than 3 ppm. The response time is considerably short and in the range of 2–3 min.
Keywords :
Gas sensor , Chalcogenide semiconductors , Environmental monitoring
Journal title :
Sensors and Actuators B: Chemical
Journal title :
Sensors and Actuators B: Chemical