• Title of article

    Ion-selective light-addressable potentiometric sensor (LAPS) with chalcogenide thin film prepared by pulsed laser deposition

  • Author/Authors

    Mourzina، نويسنده , , Y. and Yoshinobu، نويسنده , , T. and Schubert، نويسنده , , J. and Lüth، نويسنده , , H. and Iwasaki، نويسنده , , H. and Schِning، نويسنده , , M.J.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2001
  • Pages
    5
  • From page
    136
  • To page
    140
  • Abstract
    Pb–Ag–As–I–S chalcogenide glass was deposited on the surface of a light-addressable potentiometric sensor (LAPS) by means of the pulsed laser beam deposition (PLD) technique. The deposited layer worked as a Pb2+-ion-sensitive transducer, and the sensor showed Nernstian response with a sensitivity of 29±1 mV/decade. The detection limit of the sensor for Pb2+-ions was 1×10−6 mol/l. The response time does not exceed 50 s for Pb2+-ion concentrations higher than 1×10−3 mol/l, while for lower concentration range the response time increases up to 3–5 min.
  • Keywords
    Pulsed laser deposition (PLD) , Lead sensitivity , Chemical sensor , Light-addressable potentiometric sensor (LAPS) , Chalcogenide glass
  • Journal title
    Sensors and Actuators B: Chemical
  • Serial Year
    2001
  • Journal title
    Sensors and Actuators B: Chemical
  • Record number

    1412816