مرکز منطقه ای اطلاع رساني علوم و فناوري - Comment on “Simulation of Ta2O5 gate ISFET temperature characteristics” by Chou et al.

Title of article :

Comment on “Simulation of Ta2O5 gate ISFET temperature characteristics” by Chou et al.

Author/Authors :

Marek Kosmulski، نويسنده , , Marek، نويسنده ,

Issue Information :

روزنامه با شماره پیاپی سال 2001

Pages :

From page :

292

To page :

293

Keywords :

Tantalum oxide , Point of zero charge , Isoelectric point

Journal title :

Sensors and Actuators B: Chemical

Serial Year :

2001

Journal title :

Sensors and Actuators B: Chemical

Record number :

1412849

Link To Document :