A novel dissolved oxygen sensor based on MISFET structure with Pt–LaF3 mixture film

Using carbon paste film forming method, a novel all-solid dissolved oxygen (DO) sensor based on metal insulator semiconductor field effect transistor (MISFET) structure with Pt–LaF3 mixture film has been developed. In this paper, we have described the device structure. And we have measured the device characteristics, given the response curves of the output voltage (ΔVrs: the reference voltage shift) versus the DO concentration ([O2]) which were bound at different biases and different temperatures. According to our experimental results, we can come to the conclusion that the device we have proposed is feasible to determine the content of DO.