Low temperature firing microwave dielectric ceramics (K0.5Ln0.5)MoO4 (Ln = Nd and Sm) with low dielectric loss

In the present work, novel low temperature firing microwave dielectric ceramics (K0.5Ln0.5)MoO4 (Ln = Nd and Sm) were prepared via the traditional solid state reaction method. A pure monoclinic phase can be formed at a low sintering temperature around 680 °C for both (K0.5Nd0.5)MoO4 and (K0.5Sm0.5)MoO4 ceramics. The densification temperature for the (K0.5Nd0.5)MoO4 and (K0.5Sm0.5)MoO4 ceramics are 700 °C and 800 °C for 2 h, respectively. The best microwave dielectric properties for (K0.5Nd0.5)MoO4 was obtained in ceramic sample sintered at 760 °C for 2 h, with a dielectric permittivity of 9.8, a Qf about 69,000 GHz and a temperature coefficient of frequency about −62 ppm/°C. The best microwave dielectric properties for (K0.5Sm0.5)MoO4 was obtained in ceramic sample sintered at 800 °C for 2 h, with a dielectric permittivity of 9.7, a Qf about 20,000 GHz and a temperature coefficient of frequency about −65 ppm/°C.