Characterization of phosphorescence oxygen sensor based on erythrosin B in sol–gel silica in wide pressure and temperature ranges

Room temperature phosphorescence emission of erythrosin B in sol–gel silica is studied over the oxygen pressure range from 10−6 to 1000 mbar. Quenching by oxygen is significant over the entire range. The Stern–Volmer (SV) intensity data can be very well fitted using the two-site model. The temperature dependence of the phosphorescence and the delayed fluorescence are examined from −173 to 200°C at an oxygen pressure of 0.015 mbar. The phosphorescence and delayed fluorescence show opposite trends of temperature dependence, which can be exploited for temperature compensation of the sensor probe.