Porous silicon patterned by hydrogen ion implantation

This work presents some results on a new combination of process techniques in order to obtain patterning for porous silicon (PS) formation over silicon wafers aiming at integrated optical applications. Patterning is obtained by blocking PS formation on selective areas with a high resistivity buried layer as mask. This high resistivity layer is formed by hydrogen ion implantation and adequate annealing. Spreading resistance probe measurements showed a higher resistivity than 1E5 Ω cm for ion implanted layer. Structures obtained are examined by optical and scanning electron microscopy. Optical properties of PS are characterised by Raman spectroscopy. The results show the feasibility of the proposed process sequence and the preservation of PS optical properties.