Title of article
Atomic-layer chemical vapor deposition of SnO2 for gas-sensing applications
Author/Authors
Rosental، نويسنده , , A and Tarre، نويسنده , , A and Gerst، نويسنده , , A and Uustare، نويسنده , , T and Sammelselg، نويسنده , , V، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
4
From page
297
To page
300
Abstract
SnO2 layers are grown from SnCl4 and H2O at 180–300°C on quartz glass substrates by atomic-layer-chemical-vapor-deposition-like process. The layers are oxygen deficient, predominantly amorphous and contain chlorine residues. Their amorphization degree decreases with the growth temperature. All the layers are sensitive to CO in air. Perfectly amorphous scanning-force-microscopy-smooth ultrathin (<10 nm) layers are grown at 180°C. The gas sensitivity of the latter paves the way for monograin-equivalent conductometric sensors; the presence of a massive uniformity is favorable for sensor mechanisms studies.
Keywords
Tin oxide , CO sensing , SFM smoothness , Amorphous Phase , ALCVD (ALE) , Ultrathin layers
Journal title
Sensors and Actuators B: Chemical
Serial Year
2001
Journal title
Sensors and Actuators B: Chemical
Record number
1415193
Link To Document