Author/Authors :
Guidi، نويسنده , , V and Boscarino، نويسنده , , D and Casarotto، نويسنده , , L and Comini، نويسنده , , E and Ferroni، نويسنده , , M and Martinelli، نويسنده , , G and Sberveglieri، نويسنده , , G، نويسنده ,
Abstract :
Development of MoO3 as a novel material for gas sensing was addressed. Thin films were produced by reactive rf sputtering assisted by annealing. Doping with Ti was performed to enhance the conductance of the MoO3 film. It came out that the layers were two orders of magnitude more conductive than undoped material. Good and reversible response to CO was achieved at 300°C, which fell off at higher temperatures. An interesting feature of the films was a considerably fast response for both CO and NO2 despite low operating temperature. Doped films were found to operate at best about 100°C below than for pure MoO3 layers.
