Title of article :
In situ analysis of the conductance of SnO2 crystalline nanoparticles in the presence of oxidizing or reducing atmosphere by scanning tunneling microscopy
Author/Authors :
Arbiol، نويسنده , , J. and Gorostiza، نويسنده , , P. and Cirera، نويسنده , , A. and Cornet، نويسنده , , A. Belleni Morante، نويسنده , , J.R.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2001
Pages :
7
From page :
57
To page :
63
Abstract :
SnO2 crystalline semiconductor nanoparticles have been studied by scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) in order to analyze the change of conductance spectra in an oxidizing or reducing atmosphere. We measured tunneling current versus bias voltage and obtained STM images in different bias voltage conditions for SnO2 nanoparticles placed on the surface of different gas sensor layers. There was a reduction of surface bandgap and a displacement of the gap to positive bias potentials in a reducing environment, but we observed an increase of surface bandgap and a displacement to negative bias potentials in an oxidizing atmosphere. esented methodology of study becomes an innovative powerful tool for the development and understanding of semiconductor gas sensors.
Keywords :
SnO2 , STM , conductance , bandgap , STS
Journal title :
Sensors and Actuators B: Chemical
Serial Year :
2001
Journal title :
Sensors and Actuators B: Chemical
Record number :
1415333
Link To Document :
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